Available documents
Articles
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A Comparative Study Of Size Dependent Four-point Probe Sheet Resistance Measurement On Laser Annealed Ultra Shallow Junctions
D.H. Petersen et al, INSIGHT 2007 |
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Advanced Carrier Depth Profiling on Si and Ge with M4PP
T. Clarysse et al, INSIGHT 2007 |
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Accurate Sheet Resistance Measurement on Ultra-Shallow Profiles
T. Clarysse et al, MRS 2006 |
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Beyond SRP - Quantitative carrier profiling with M4PP
T. Clarysse et al, E-MRS 2006 |
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Micro-Scale Sheet Resistance Measurements On Ultra Shallow Junctions
C.L. Petersen et al, RTP Conference 2006 |
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Electrical Resistance of Laser Sintered Direct-Write Deposited Materials for Microelectronic Applications
Valery P. Marinov (2004)
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Variable-Temperature Micro-Four-Point Probe Method for Surface Electrical Conductivity Measurements in Ultrahigh Vacuum
T. Tanikawa et al |
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Direct Measurement of the Microscale Conductivity of Conjugated Polymer Monolayers
P. Bøggild et al, Adv. Materials, 2000, 12, No. 13, July 5
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Application Notes
Other Micro Multi-Point Probe related scientific papers
D.W. Abraham et al, Rapid-turnaround characterization methods for MRAM development, IBM Journal of Research and Development, Vol. 50 No. 1, January 2006
J. W. Wells, K. Handrup, J. F. Kallehauge, L. Gammelgaard, P. Bøggild, M. B. Balslev, J. E. Hansen, P. R. E. Petersen, Ph. Hofmann. The conductivity of Bi(111) investigated with nanoscale four point probes. App. Phys. 104, 053717 (2008).
L. Gammelgaard, P. Bøggild, J. W. Wells, K. Handrup. Ph. Hofmann, M. B. Balslev, J. E. Hansen, P. R. E. Petersen. A complementary metal-oxide-semiconductor compatible monocantilever 12-point probe for conductivity measurements on the nanoscale. App. Phys. Lett. 93, 093104 (2008).
J. W. Wells, J. F. Kallehauge, T. M. Hansen, and Ph. Hofmann, Thermal Switching of the electrical conductivity of Si (111) (√ 3x√ 3) Ag due to surface phase transition, Journal of Physics: Cond. Matt., 19, 176008 (1-7) (2007)
J. W. Wells, J. F. Kallehauge, T. M. Hansen, and Ph. Hofmann, Disentangling surface, bulk and space-charge layer conductivity: Si (111) (7 x 7), Phys. Rev. Lett. 97, 206803 (2006)
D. C. Worledge et al, “Magnetoresistance measurement of unpatterned magnetic tunnel junction wafers by current-in-plane tunneling”, paper BD-01, 9th joint MMM/intermag Conference 2004
K. Tsunekawa et al, “Over 60% TMR at room temperature in MTJ films prepared with surface modification process”, Paper B-P-03, 9th Joint MMM/Intermag Conference 2004.
D. C. Worledge and P. L . Trouilloud, Magnetoresistance measurement of unpatterned magnetic tunnel junction wafers by current-in-plane tunneling, Appl. Phys. Lett., 83 No. 1, pp. 84-86 (2003)
C. L. Petersen et al., Reproducibility of Nano- and Micro-Scale Multi-Point Probe Sheet Resistance Measurements, Mat. Res. Soc. Proc., 738 (2003) 157.
S. Hasegawa and F. Grey, Electronic transport at semiconductor surfaces - from point-contact transistor to micro-four-point probes, Surf. Sci. 500 (2002) 84
S. Hasegawa et al., Direct Measurement of Surface-State Conductance by Microscopic Four-Point Probe Method, J. Phys.:Condens Matter 14 (2002) 8379
C. L. Petersen et al., Scanning Microscopic Four-Point Conductivity Probes, Sensors and Actuators A 96 (2002) 53
S. Hasegawa at al., Surface-State Bands on Silicon Si(111)-Sqrt3xSqrt3-Ag Surface Superstructure, Jap. J. Appl. Phys. 39 (2000) 3815
Shiraki et al., Micro-Four-Point Probes in a UHV Scanning Electron Microscope for in-situ Surface-Conductivity Measurements, Surface Review and Letters, 7 (2000) 533
C. L. Petersen et al., Micro-Four-Point Probe for Studying Electronic Transport Through Surface States, Appl. Phys. Lett. 77 (2000) 3782
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